PART |
Description |
Maker |
STP5NK65Z STP5NK65ZFP |
N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 650V 1.5 OHM 5A TO-220 ZENER-PROTECTED SUPERMESH POWER MOSFET JFET; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:100mA; Gate-Source Cutoff Voltage Max, Vgs(off):-9V; Continuous Drain Current, Id:100mA; Current Rating:100mA; Gate-Source Breakdown Voltage:-25V RoHS Compliant: No N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESHPower MOSFET N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL 650V - 1.5ohm - 5A TO-220 Zener-Protected SuperMESH?Power MOSFET
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ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
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STL5NK65Z L5NK65Z |
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESH?Power MOSFET N-CHANNEL 650V 1.5 OHM 4.2A POWERFLAT ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT⑩ Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLATZener-Protected SuperMESH⑩Power MOSFET N沟道650V - 1.5ohm - 4.2A的PowerFLAT⑩齐保护SuperMESH⑩功率MOSFET
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
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IRFIB5N65 IRFIB5N65A |
650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=5.1A)
|
International Rectifier
|
IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 650V CoolMOS C6 Power Transistor Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
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IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET 16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET 2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET 2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET 2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET 19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET 7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET 1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc. Intersil, Corp. VISHAY INTERTECHNOLOGY INC
|
10-FY074PA050SM-M582F38 |
650V IGBT H5 and 650V Stealth Si diode
|
Vincotech
|
APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN 22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN 1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET 31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp. MICROSEMI CORP
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TMU7N65H |
650V N-Channel MOSFET
|
Wuxi Unigroup Microelec...
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HFP10N65S |
650V N-Channel MOSFET
|
SemiHow Co.,Ltd.
|
SVF7N65T SVF7N65F |
650V N-CHANNEL MOSFET
|
Silan Microelectronics
|
HFP8N65S |
650V N-Channel MOSFET
|
SemiHow Co.,Ltd.
|
HFD1N65S HFU1N65S |
650V N-Channel MOSFET
|
SemiHow Co.,Ltd.
|
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